2008. 8. 29 1/3 semiconductor technical data kta2014 epitaxial planar pnp transistor revision no : 3 general purpose application. switching application. features h excellent h fe linearity : h fe (0.1ma)/h fe (2ma)=0.95(typ.). h low noise : nf=1db(typ.), 10db(max.). h complementary to ktc4075. h small package. maximum rating (ta=25 ? ) dim millimeters a b d e usm 2.00 0.20 1.25 0.15 0.90 0.10 0.3+0.10/-0.05 2.10 0.20 0.65 0.15+0.1/-0.06 1.30 0.00~0.10 0.70 c g h j k l k 1 3 2 e b d a j g c l h mm n n m 0.42 0.10 n 0.10 min p 0.1 max + _ + _ + _ + _ + _ p 1. emitter 2. base 3. collector electrical characteristics (ta=25 ? ) characteristic symbol rating unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -5 v collector current i c -150 ma base current i b -30 ma collector power dissipation p c 100 mw junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-50v, i e =0 - - -0.1 a emitter cut-off current i ebo v eb =-5v, i c =0 - - -0.1 a dc current gain h fe (note) v ce =-6v, i c =-2ma 70 - 400 collector-emitter saturation voltage v ce(sat) i c =-100ma, i b =-10ma - -0.1 -0.3 v transition frequency f t v ce =-10v, i c =-1ma 80 - - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 4 7 pf noise figure nf v ce =-6v, i c =-0.1ma f=1khz, rg=10k ? - 1.0 10 db note : h fe classification o(2):70 q 140, y(4):120 q 240, gr(6):200 q 400 h rank fe type name marking lot no. s
2008. 8. 29 2/3 kta2014 revision no : 3
2008. 8. 29 3/3 kta2014 revision no : 3
|
